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  The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries

Freysoldt, C., Pfanner, G., & Neugebauer, J. (2012). The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries. Journal of Non-Crystalline Solids, 358(17), 2063-2066. doi:10.1016/j.jnoncrysol.2011.12.090.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-27E1-1 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-23E6-9
Genre: Journal Article

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 Creators:
Freysoldt, Christoph1, Author              
Pfanner, Gernot1, Author              
Neugebauer, Jörg2, Author              
Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2012-09-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: eDoc: 618226
DOI: 10.1016/j.jnoncrysol.2011.12.090
 Degree: -

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Title: Journal of Non-Crystalline Solids
Source Genre: Journal
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Publ. Info: Amsterdam : North-Holland
Pages: - Volume / Issue: 358 (17) Sequence Number: - Start / End Page: 2063 - 2066 Identifier: ISSN: 0022-3093
CoNE: /journals/resource/954925416961