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  Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting

Albrecht, M., Markurt, T., Schulz, T., Lymperakis, L., Duff, A., Neugebauer, J., et al. (2012). Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. Talk presented at International Conference on Extended Defects in Semiconductors. Thessaloniki, Greek. 2012-06-24 - 2012-06-29.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-28D7-2 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-3FF8-5
Genre: Talk

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 Creators:
Albrecht, M., Author
Markurt, T., Author
Schulz, T., Author
Lymperakis, L.1, Author              
Duff, A.1, Author              
Neugebauer, J.2, Author              
Drechsel, P., Author
Stauss, P., Author
Affiliations:
1External Organizations, ou_persistent22              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2012-06
 Publication Status: Not specified
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 626122
 Degree: -

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Title: International Conference on Extended Defects in Semiconductors
Place of Event: Thessaloniki, Greek
Start-/End Date: 2012-06-24 - 2012-06-29
Invited: Yes

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