Excitonic emission from a-type screw dislocations in GaN

Lymperakis, L.; Albrecht, M.; Neugebauer, J.

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Excitonic emission from a-type screw dislocations in GaN

Lymperakis, L., Albrecht, M., & Neugebauer, J. (2012). Excitonic emission from a-type screw dislocations in GaN. Talk presented at International Conference on Extended Defects in Semiconductors. Thessaloniki, Greek. 2012-06-24 - 2012-06-29.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-28DF-1 Versions-Permalink: https://hdl.handle.net/21.11116/0000-0002-D375-C

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Urheber:
Lymperakis, L.¹, Autor
Albrecht, M., Autor
Neugebauer, J.², Autor

Affiliations:
1External Organizations, ou_persistent22
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337