Excitonic emission from a-type screw dislocations in GaN

Lymperakis, L.; Albrecht, M.; Neugebauer, J.

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Excitonic emission from a-type screw dislocations in GaN

Lymperakis, L., Albrecht, M., & Neugebauer, J. (2012). Excitonic emission from a-type screw dislocations in GaN. Talk presented at International Conference on Extended Defects in Semiconductors. Thessaloniki, Greek. 2012-06-24 - 2012-06-29.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-28DF-1 Version Permalink: https://hdl.handle.net/21.11116/0000-0002-D375-C

Genre: Talk

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Creators:
Lymperakis, L.¹, Author
Albrecht, M., Author
Neugebauer, J.², Author

Affiliations:
1External Organizations, ou_persistent22
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2012-06

Publication Status: Not specified

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Identifiers: eDoc: 626124

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Title: International Conference on Extended Defects in Semiconductors

Place of Event: Thessaloniki, Greek

Start-/End Date: 2012-06-24 - 2012-06-29

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