English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion

Pfanner, G., Freysoldt, C., Neugebauer, J., & Gerstmann, U. (2012). Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion. Physical Review B, 85(19): 195202, pp. 1-8. doi:10.1103/PhysRevB.85.195202.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-29C5-6 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-23A8-6
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Pfanner, Gernot1, Author              
Freysoldt, Christoph1, Author              
Neugebauer, Jörg2, Author              
Gerstmann, Uwe3, Author              
Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
3Lehrstuhl für Theoretische Physik, Universität Paderborn, 33095 Paderborn, Germany, ou_persistent22              

Content

show

Details

show
hide
Language(s): eng - English
 Dates: 2012-05-04
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: eDoc: 614921
DOI: 10.1103/PhysRevB.85.195202
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: 8 Volume / Issue: 85 (19) Sequence Number: 195202 Start / End Page: 1 - 8 Identifier: ISSN: 1098-0121
CoNE: /journals/resource/954925225008