The Dangling-bond Defect in Crystalline and Amorphous Silicon: Insights from Ab 
initio Calculations of EPR-parameters

Pfanner, G.; Freysoldt, C.; Neugebauer, J.

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The Dangling-bond Defect in Crystalline and Amorphous Silicon: Insights from Ab initio Calculations of EPR-parameters

Pfanner, G., Freysoldt, C., & Neugebauer, J. (2012). The Dangling-bond Defect in Crystalline and Amorphous Silicon: Insights from Ab initio Calculations of EPR-parameters. Talk presented at MRS Spring Meeting. San Francisco, CA, USA. 2012-04-11.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2A5D-8 Versions-Permalink: https://hdl.handle.net/21.11116/0000-0002-D38B-3

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Urheber:
Pfanner, G.¹, Autor
Freysoldt, C.¹, Autor
Neugebauer, J.², Autor

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337