EPR parameters of the dangling bond defect in crystalline and amorphous 
silicon: A DFT-study

Pfanner, G.; Freysoldt, C.; Neugebauer, J.

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EPR parameters of the dangling bond defect in crystalline and amorphous silicon: A DFT-study

Pfanner, G., Freysoldt, C., & Neugebauer, J. (2011). EPR parameters of the dangling bond defect in crystalline and amorphous silicon: A DFT-study. Poster presented at Euromat 2011, Montpellier, France.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-2FE7-A Version Permalink: https://hdl.handle.net/21.11116/0000-0002-9246-A

Genre: Poster

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Creators:
Pfanner, G.¹, Author
Freysoldt, C.¹, Author
Neugebauer, J.², Author

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2011-09-12

Publication Status: Not specified

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Identifiers: eDoc: 575367

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Title: Euromat 2011

Place of Event: Montpellier, France

Start-/End Date: 2011-09-12

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