The Dangling-Bond Defect in Amorphous Silicon: Statistical Random Versus 
Kinetically Driven Defect Geometries

Freysoldt, C.; Pfanner, G.; Neugebauer, J.

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The Dangling-Bond Defect in Amorphous Silicon: Statistical Random Versus Kinetically Driven Defect Geometries

Freysoldt, C., Pfanner, G., & Neugebauer, J. (2011). The Dangling-Bond Defect in Amorphous Silicon: Statistical Random Versus Kinetically Driven Defect Geometries. Talk presented at 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24). Nara, Japan. 2011-08-25.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3068-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-306A-E

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Creators:
Freysoldt, C.¹, Author
Pfanner, G.¹, Author
Neugebauer, J.², Author

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Identifiers: eDoc: 575366

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Title: 24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Place of Event: Nara, Japan

Start-/End Date: 2011-08-25

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