English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M., & Aroutiounian, V. M. (2011). Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. Journal of Applied Physics, 110(4), 043708-1-043708-6. doi:10.1063/1.3624621.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-3078-0 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-307A-C
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Marquardt, O.1, Author              
Hickel, T.2, Author              
Neugebauer, J.3, Author              
Gambaryan, K. M., Author
Aroutiounian, V. M., Author
Affiliations:
1External Organizations, ou_persistent22              
2Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

Content

show

Details

show
hide
Language(s): eng - English
 Dates: 2011-08-22
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 581726
DOI: 10.1063/1.3624621
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Journal of Applied Physics
  Alternative Title : J. Appl. Phys.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 110 (4) Sequence Number: - Start / End Page: 043708-1 - 043708-6 Identifier: -