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  Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M., & Aroutiounian, V. M. (2011). Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. Journal of Applied Physics, 110(4), 043708-1-043708-6. doi:10.1063/1.3624621.

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 Creators:
Marquardt, O.1, Author              
Hickel, T.2, Author              
Neugebauer, J.3, Author              
Gambaryan, K. M., Author
Aroutiounian, V. M., Author
Affiliations:
1External Organizations, ou_persistent22              
2Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2011-08-22
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 581726
DOI: 10.1063/1.3624621
 Degree: -

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Title: Journal of Applied Physics
  Alternative Title : J. Appl. Phys.
Source Genre: Journal
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Pages: - Volume / Issue: 110 (4) Sequence Number: - Start / End Page: 043708-1 - 043708-6 Identifier: -