Growth process, characterization, and modeling of electronic properties of 
coupled InAsSbP nanostructures

Marquardt, O.; Hickel, T.; Neugebauer, J.; Gambaryan, K. M.; Aroutiounian, V. M.

doi:10.1063/1.3624621

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Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M., & Aroutiounian, V. M. (2011). Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. Journal of Applied Physics, 110(4), 043708-1-043708-6. doi:10.1063/1.3624621.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3078-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-307A-C

Genre: Journal Article

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Creators:
Marquardt, O.¹, Author
Hickel, T.², Author
Neugebauer, J.³, Author
Gambaryan, K. M., Author
Aroutiounian, V. M., Author

Affiliations:
1External Organizations, ou_persistent22
2Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2011-08-22

Publication Status: Issued

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Identifiers: eDoc: 581726
DOI: 10.1063/1.3624621

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Title: Journal of Applied Physics

Alternative Title : J. Appl. Phys.

Source Genre: Journal

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Pages: - Volume / Issue: 110 (4) Sequence Number: - Start / End Page: 043708-1 - 043708-6 Identifier: -