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  Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures

Lymperakis, L., Abu-Farsakh, H., Marquardt, O., Hickel, T., & Neugebauer, J. (2011). Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures. Physica Status Solidi B, 248(8), 1837-1852. doi:10.1002/pssb.201046511.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-30A9-2 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-30AB-D
Genre: Journal Article

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 Creators:
Lymperakis, L.1, Author              
Abu-Farsakh, H.2, Author              
Marquardt, O.2, Author              
Hickel, T.3, Author              
Neugebauer, J.4, Author              
Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
2External Organizations, ou_persistent22              
3Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
4Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2011-08
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 581721
DOI: 10.1002/pssb.201046511
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Title: Physica Status Solidi B
  Alternative Title : Phys. Stat. Sol. B
Source Genre: Journal
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Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 248 (8) Sequence Number: - Start / End Page: 1837 - 1852 Identifier: -