Ab-initio based comparitive study of In incorporation and surface segregation 
on III- and N-face {0001} InGaN surfaces

Duff, A.; Lymperakis, L.; Neugebauer, J.

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Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces

Duff, A., Lymperakis, L., & Neugebauer, J. (2011). Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. Talk presented at 9th International Conference of Nitride Semi-Conductors. Glasgow, UK. 2011-07-10 - 2011-07-15.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-30E6-7 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-30E8-3

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Urheber:
Duff, A.¹, Autor
Lymperakis, L.¹, Autor
Neugebauer, J.², Autor

Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337