Ab-initio based comparitive study of In incorporation and surface segregation 
on III- and N-face {0001} InGaN surfaces

Duff, A.; Lymperakis, L.; Neugebauer, J.

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Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces

Duff, A., Lymperakis, L., & Neugebauer, J. (2011). Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. Talk presented at 9th International Conference of Nitride Semi-Conductors. Glasgow, UK. 2011-07-10 - 2011-07-15.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-30E6-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-30E8-3

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Creators:
Duff, A.¹, Author
Lymperakis, L.¹, Author
Neugebauer, J.², Author

Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Identifiers: eDoc: 581696

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Title: 9th International Conference of Nitride Semi-Conductors

Place of Event: Glasgow, UK

Start-/End Date: 2011-07-10 - 2011-07-15

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