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  Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces

Duff, A., Lymperakis, L., & Neugebauer, J. (2011). Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. Talk presented at 9th International Conference of Nitride Semi-Conductors. Glasgow, UK. 2011-07-10 - 2011-07-15.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-30E6-7 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-30E8-3
Genre: Talk

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 Creators:
Duff, A.1, Author              
Lymperakis, L.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
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 Publication Status: Not specified
 Pages: -
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 Rev. Method: -
 Identifiers: eDoc: 581696
 Degree: -

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Title: 9th International Conference of Nitride Semi-Conductors
Place of Event: Glasgow, UK
Start-/End Date: 2011-07-10 - 2011-07-15

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