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  Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN

Kioseoglou, J., Kalesaki, E., Lymperakis, L., Neugebauer, J., Komninou, P., & Karakostas, T. (2011). Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN. Journal of Applied Physics, 109, 083511-1-083511-6. doi:10.1063/1.3569856.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-3521-A Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-3523-6
Genre: Journal Article

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 Creators:
Kioseoglou, J., Author
Kalesaki, E., Author
Lymperakis, L.1, Author              
Neugebauer, J.2, Author              
Komninou, P., Author
Karakostas, T., Author
Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2011
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 625743
DOI: 10.1063/1.3569856
 Degree: -

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Title: Journal of Applied Physics
  Alternative Title : J. Appl. Phys.
Source Genre: Journal
 Creator(s):
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Publ. Info: -
Pages: - Volume / Issue: 109 Sequence Number: - Start / End Page: 083511-1 - 083511-6 Identifier: -