GaN(0001) Surface States: A Comparison Between Photoelectron Spectroscopy and 
Density Functional Theory

Himmerlich, M.; Lorenz, P.; Lymperakis, L.; Gutt, R.; Neugebauer, J.; Krischok, S.

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GaN(0001) Surface States: A Comparison Between Photoelectron Spectroscopy and Density Functional Theory

Himmerlich, M., Lorenz, P., Lymperakis, L., Gutt, R., Neugebauer, J., & Krischok, S. (2010). GaN(0001) Surface States: A Comparison Between Photoelectron Spectroscopy and Density Functional Theory. Talk presented at International Workshop on Nitride Semiconductors. Tampa, Florida, USA. 2010-09-19 - 2010-09-24.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-36C5-1 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-36C7-E

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Urheber:
Himmerlich, M., Autor
Lorenz, P., Autor
Lymperakis, L.¹, Autor
Gutt, R., Autor
Neugebauer, J.², Autor
Krischok, S., Autor

Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337