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  Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots

Marquardt, O., Hickel, T., & Neugebauer, J. (2010). Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots. Talk presented at Computational Materials Science on Complex Energy Landscapes Workshop. Imst, Austria. 2010-01-25 - 2010-01-29.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-3B27-1 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-3B29-E
Genre: Talk

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 Creators:
Marquardt, O.1, Author              
Hickel, T.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
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 Publication Status: Not specified
 Pages: -
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 Rev. Method: -
 Identifiers: eDoc: 446174
 Degree: -

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Title: Computational Materials Science on Complex Energy Landscapes Workshop
Place of Event: Imst, Austria
Start-/End Date: 2010-01-25 - 2010-01-29

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