Polarization-induced charge carrier separation in realistic polar and nonpolar 
grown GaN quantum dots

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots

Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots. Talk presented at Collaborative Conference on Interacting Nanostructures CCIN'09. San Diego, CA, USA. 2009-11-09 - 2009-11-13.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3DF9-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3DFB-6

Genre: Talk

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Creators:
Marquardt, O.¹, Author
Hickel, T.¹, Author
Neugebauer, J.², Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Publication Status: Not specified

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Identifiers: eDoc: 443497

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Title: Collaborative Conference on Interacting Nanostructures CCIN'09

Place of Event: San Diego, CA, USA

Start-/End Date: 2009-11-09 - 2009-11-13

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