Polarization-induced charge carrier separation in realistic polar and nonpolar 
grown GaN quantum dots

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots

Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots. Talk presented at Collaborative Conference on Interacting Nanostructures CCIN'09. San Diego, CA, USA. 2009-11-09 - 2009-11-13.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3DF9-A Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-3DFB-6

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Urheber:
Marquardt, O.¹, Autor
Hickel, T.¹, Autor
Neugebauer, J.², Autor

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337