What can EPR hyperfine parameters tell about the Si dangling bond? - A 
theoretical study

Freysoldt, C.; Pfanner, G.; Neugebauer, J.

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What can EPR hyperfine parameters tell about the Si dangling bond? - A theoretical study

Freysoldt, C., Pfanner, G., & Neugebauer, J. (2009). What can EPR hyperfine parameters tell about the Si dangling bond? - A theoretical study. Talk presented at International conference on amorphous and nanoporous semiconductors (ICANS) 23. Utrecht, Netherlands. 2009-08-24 - 2009-08-28.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-4008-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-400A-5

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Creators:
Freysoldt, C.¹, Author
Pfanner, G.¹, Author
Neugebauer, J.², Author

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Identifiers: eDoc: 441562

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Title: International conference on amorphous and nanoporous semiconductors (ICANS) 23

Place of Event: Utrecht, Netherlands

Start-/End Date: 2009-08-24 - 2009-08-28

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