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  Role of the parasitic Mg3N2 phase in post-growth activation of p-doped Mg:GaN

Lange, B., Freysoldt, C., & Neugebauer, J. (2009). Role of the parasitic Mg3N2 phase in post-growth activation of p-doped Mg:GaN. Poster presented at CECAM Workshop 09: Which Electronic Structure Method for the Study of Defects?, CECAM-HQ-EPFL, Lausanne, Switzerland.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-40C2-5 Version Permalink: http://hdl.handle.net/21.11116/0000-0002-8DD3-1
Genre: Poster

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 Creators:
Lange, B.1, Author              
Freysoldt, C.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2009-06
 Publication Status: Not specified
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 441502
 Degree: -

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Title: CECAM Workshop 09: Which Electronic Structure Method for the Study of Defects?
Place of Event: CECAM-HQ-EPFL, Lausanne, Switzerland
Start-/End Date: 2009-06-08 - 2009-06-10

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