Role of the parasitic Mg3N2 phase in post-growth activation of p-doped Mg:GaN

Lange, B.; Freysoldt, C.; Neugebauer, J.

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Role of the parasitic Mg₃N₂ phase in post-growth activation of p-doped Mg:GaN

Lange, B., Freysoldt, C., & Neugebauer, J. (2009). Role of the parasitic Mg₃N₂ phase in post-growth activation of p-doped Mg:GaN. Poster presented at CECAM Workshop 09: Which Electronic Structure Method for the Study of Defects?, CECAM-HQ-EPFL, Lausanne, Switzerland.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-40C2-5 Versions-Permalink: https://hdl.handle.net/21.11116/0000-0002-8DD3-1

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Urheber:
Lange, B.¹, Autor
Freysoldt, C.¹, Autor
Neugebauer, J.², Autor

Affiliations:
1Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337