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  Application of an eight-band k.p model to study III-nitride semiconductor

Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Application of an eight-band k.p model to study III-nitride semiconductor. Talk presented at DPG Spring Meeting 2009. Dresden, Germany. 2009-03-22 - 2009-03-27.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-41F2-2 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-41F4-D
Genre: Talk

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 Creators:
Marquardt, O.1, Author              
Hickel, T.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
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 Publication Status: Not specified
 Pages: -
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 Rev. Method: -
 Identifiers: eDoc: 443494
 Degree: -

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Title: DPG Spring Meeting 2009
Place of Event: Dresden, Germany
Start-/End Date: 2009-03-22 - 2009-03-27

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