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  Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot

Young, T. D., & Marquardt, O. (2009). Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot. Physica Status Solidi C, C6(S2), S557-S560. doi:10.1002/pssc.200880901.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-429E-9 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-42A0-1
Genre: Journal Article

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 Creators:
Young, T. D., Author
Marquardt, O.1, Author              
Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              

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Language(s): eng - English
 Dates: 2009-01-23
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 377644
DOI: 10.1002/pssc.200880901
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Title: Physica Status Solidi C
  Alternative Title : phys. status solidi C
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: C6 (S2) Sequence Number: - Start / End Page: S557 - S560 Identifier: -