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  A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots

Marquardt, O., Mourad, D., Schulz, S., Hickel, T., Czycholl, G., & Neugebauer, J. (2008). A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. Physical Review B, 78: 235302.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-4509-1 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-450B-E
Genre: Journal Article

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 Creators:
Marquardt, O.1, Author              
Mourad, D., Author
Schulz, S.2, Author              
Hickel, T.1, Author              
Czycholl, G., Author
Neugebauer, J.3, Author              
Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
2Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              
3Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2008-12-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 377770
 Degree: -

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Title: Physical Review B
  Alternative Title : Phys. Rev. B.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 78 Sequence Number: 235302 Start / End Page: - Identifier: -