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  Modeling of electronic and optical properties of GaN/AlN quantum dots by using the k.p-method

Marquardt, O., Hickel, T., & Neugebauer, J. (2008). Modeling of electronic and optical properties of GaN/AlN quantum dots by using the k.p-method. Talk presented at Bremen DFG Forschergruppe: Workshop in Riezlern. Riezlern, Austria. 2008-09-22 - 2008-09-26.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-460B-8 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-460D-4
Genre: Talk

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 Creators:
Marquardt, O.1, Author              
Hickel, T.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
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 Publication Status: Not specified
 Pages: -
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 Rev. Method: -
 Identifiers: eDoc: 378556
 Degree: -

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Title: Bremen DFG Forschergruppe: Workshop in Riezlern
Place of Event: Riezlern, Austria
Start-/End Date: 2008-09-22 - 2008-09-26

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