Effect of strain and polarization on the electronic properties of 2-, 1- and 
0-dimensional semiconductor nanostructures

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Effect of strain and polarization on the electronic properties of 2-, 1- and 0-dimensional semiconductor nanostructures

Marquardt, O., Hickel, T., & Neugebauer, J. (2008). Effect of strain and polarization on the electronic properties of 2-, 1- and 0-dimensional semiconductor nanostructures. Talk presented at Computational Materials Science Workshop. Ebernburg Castle, Germany. 2008-08-25 - 2008-08-28.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-471B-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-471D-7

Genre: Talk

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Creators:
Marquardt, O.¹, Author
Hickel, T.¹, Author
Neugebauer, J.², Author

Affiliations:
1Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Identifiers: eDoc: 377755

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Title: Computational Materials Science Workshop

Place of Event: Ebernburg Castle, Germany

Start-/End Date: 2008-08-25 - 2008-08-28

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