Theoretical study of copper contaminated dislocations in silicon

Fujita, N.; Blumenau, A. T.; Jones, R.; Öberg, S.; Briddon, P. R.

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Theoretical study of copper contaminated dislocations in silicon

Fujita, N., Blumenau, A. T., Jones, R., Öberg, S., & Briddon, P. R. (2007). Theoretical study of copper contaminated dislocations in silicon. Poster presented at 12th GADEST conference 2007, Erice, Italy.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-4F92-C Version Permalink: https://hdl.handle.net/21.11116/0000-0002-9102-7

Genre: Poster

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Creators:
Fujita, N., Author
Blumenau, A. T.¹, Author
Jones, R., Author
Öberg, S., Author
Briddon, P. R., Author

Affiliations:
1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351

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Language(s): eng - English

Dates: Created: 2007-10

Publication Status: Not specified

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Identifiers: eDoc: 378922

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Title: 12th GADEST conference 2007

Place of Event: Erice, Italy

Start-/End Date: 2007-10-14 - 2007-10-19

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