Theoretical study of copper contaminated dislocations in silicon

Fujita, N.; Blumenau, A. T.; Jones, R.; Öberg, S.; Briddon, P. R.

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Theoretical study of copper contaminated dislocations in silicon

Fujita, N., Blumenau, A. T., Jones, R., Öberg, S., & Briddon, P. R. (2007). Theoretical study of copper contaminated dislocations in silicon. Poster presented at 12th GADEST conference 2007, Erice, Italy.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-4F92-C Versions-Permalink: https://hdl.handle.net/21.11116/0000-0002-9102-7

Genre: Poster

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Urheber:
Fujita, N., Autor
Blumenau, A. T.¹, Autor
Jones, R., Autor
Öberg, S., Autor
Briddon, P. R., Autor

Affiliations:
1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351