First-principles calculations on CVD growth and doping in group-III-nitride 
semiconductors

Neugebauer, J.

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First-principles calculations on CVD growth and doping in group-III-nitride semiconductors

Neugebauer, J. (2007). First-principles calculations on CVD growth and doping in group-III-nitride semiconductors. Talk presented at EuroCVD16 - Sixteenth European Conference on Chemical Vapor Deposition. The Hague, The Netherlands. 2007-09-16 - 2007-09-21.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5058-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-505A-3

Genre: Talk

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Creators:
Neugebauer, J.¹, Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

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Publication Status: Not specified

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Identifiers: eDoc: 319952

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Title: EuroCVD16 - Sixteenth European Conference on Chemical Vapor Deposition

Place of Event: The Hague, The Netherlands

Start-/End Date: 2007-09-16 - 2007-09-21

Invited: Yes

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