Extended defects in GaN from an atomistic modelling point view

Blumenau, A. T.

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Extended defects in GaN from an atomistic modelling point view

Blumenau, A. T. (2007). Extended defects in GaN from an atomistic modelling point view. Talk presented at OPTO 2007, Integrated Optoelectronic Devices. San Jose, California, USA. 2007-01-20 - 2007-01-25.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-53F3-2 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-53F5-D

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Urheber:
Blumenau, A. T.¹, Autor

Affiliations:
1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351