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  Enhancing the solubility of N in GaAs and InAs by surface kinetics

Abu-Farsakh, H., & Neugebauer, J. (2006). Enhancing the solubility of N in GaAs and InAs by surface kinetics. Poster presented at 28th International Conference on the Physics of Semiconductors, Vienna, Austria.

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 Creators:
Abu-Farsakh, H.1, Author              
Neugebauer, J.1, Author              
Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
 Dates: 2006-07
 Publication Status: Not specified
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 289363
 Degree: -

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Title: 28th International Conference on the Physics of Semiconductors
Place of Event: Vienna, Austria
Start-/End Date: 2006-07-24 - 2006-07-28

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