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  Incorporation of N at GaAs and InAs surfaces: An ab-initio study

Abu-Farsakh, H., & Neugebauer, J. (2006). Incorporation of N at GaAs and InAs surfaces: An ab-initio study. Talk presented at Technische Universität Berlin. Berlin, Germany. 2006-04-12.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-59EC-8 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-59EE-4
Genre: Talk

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 Creators:
Abu-Farsakh, H.1, Author              
Neugebauer, J.1, Author              
Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
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 Publication Status: Not specified
 Pages: -
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 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 289362
 Degree: -

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Title: Technische Universität Berlin
Place of Event: Berlin, Germany
Start-/End Date: 2006-04-12
Invited: Yes

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