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  Theory of Dislocations in SiC: The Effect of Charge on Kink Migration

Eberlein, T., Jones, R., & Blumenau, A. T. (2006). Theory of Dislocations in SiC: The Effect of Charge on Kink Migration. Materials Science Forum, 321, 527-529.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5BAC-8 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5BAE-4
Genre: Conference Paper

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 Creators:
Eberlein, T.A.G., Author
Jones, R., Author
Blumenau, A. T.1, Author              
Affiliations:
1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351              

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Language(s): eng - English
 Dates: 2006
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 286388
 Degree: -

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Title: International Conference on Silicon Carbide and Related Materials
Place of Event: Pittsburgh, PA, USA
Start-/End Date: 2005-09-18 - 2005-09-23

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Title: Materials Science Forum
  Alternative Title : Mater. Sci. Forum
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 321 Sequence Number: - Start / End Page: 527 - 529 Identifier: -