Theory of Dislocations in SiC: The Effect of Charge on Kink Migration

Eberlein, T.A.G.; Jones, R.; Blumenau, A. T.

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Theory of Dislocations in SiC: The Effect of Charge on Kink Migration

Eberlein, T., Jones, R., & Blumenau, A. T. (2006). Theory of Dislocations in SiC: The Effect of Charge on Kink Migration. Materials Science Forum, 321, 527-529.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5BAC-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5BAE-4

Genre: Conference Paper

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Creators:
Eberlein, T.A.G., Author
Jones, R., Author
Blumenau, A. T.¹, Author

Affiliations:
1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351

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Language(s): eng - English

Dates: Date issued: 2006

Publication Status: Issued

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Identifiers: eDoc: 286388

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Title: International Conference on Silicon Carbide and Related Materials

Place of Event: Pittsburgh, PA, USA

Start-/End Date: 2005-09-18 - 2005-09-23

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Title: Materials Science Forum

Alternative Title : Mater. Sci. Forum

Source Genre: Journal

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Pages: - Volume / Issue: 321 Sequence Number: - Start / End Page: 527 - 529 Identifier: -