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  Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory.

Rinke, P., Qteish, A., Winkelnkemper, M., Bimberg, D., Neugebauer, J., & Scheffler, M. (2006). Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory. Applied Physics Letters, 89(16): 161919.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5C79-E Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5C7B-A
Genre: Journal Article

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 Creators:
Rinke, P., Author
Qteish, A., Author
Winkelnkemper, M., Author
Bimberg, D., Author
Neugebauer, J.1, Author              
Scheffler, M., Author
Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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 Dates: 2006
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: -
 Identifiers: eDoc: 291372
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Title: Applied Physics Letters
  Alternative Title : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
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Publ. Info: -
Pages: - Volume / Issue: 89 (16) Sequence Number: 161919 Start / End Page: - Identifier: -