Polarity inversion of GaN (0001) surfaces induced by Si adsorption

Rosa, A. L.; Neugebauer, J.

doi:10.1016/j.susc.2005.10.030

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Polarity inversion of GaN (0001) surfaces induced by Si adsorption

Rosa, A. L., & Neugebauer, J. (2006). Polarity inversion of GaN (0001) surfaces induced by Si adsorption. Surface Science, 600(2), 229-335. doi:10.1016/j.susc.2005.10.030.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5C7D-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5C7F-2

Genre: Journal Article

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Rosa, A. L., Author
Neugebauer, J.¹, Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Date issued: 2006

Publication Status: Issued

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Identifiers: eDoc: 291375
DOI: 10.1016/j.susc.2005.10.030

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Title: Surface Science

Alternative Title : Surf. Sci.

Source Genre: Journal

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Pages: - Volume / Issue: 600 (2) Sequence Number: - Start / End Page: 229 - 335 Identifier: -