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  Electronic properties of non-stoichiometric dislocation cores in GaN

Lymperakis, L., & Neugebauer, J. (2005). Electronic properties of non-stoichiometric dislocation cores in GaN. Talk presented at Materials Research Society fall meeting. Boston, MA, USA. 2005-11-28 - 2005-12-01.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5D19-B Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5D1B-7
Genre: Talk

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 Creators:
Lymperakis, L.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Language(s): eng - English
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 Publication Status: Not specified
 Pages: -
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 Rev. Method: -
 Identifiers: eDoc: 289325
 Degree: -

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Title: Materials Research Society fall meeting
Place of Event: Boston, MA, USA
Start-/End Date: 2005-11-28 - 2005-12-01

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