Electronic properties of non-stoichiometric dislocation cores in GaN

Lymperakis, L.; Neugebauer, J.

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Electronic properties of non-stoichiometric dislocation cores in GaN

Lymperakis, L., & Neugebauer, J. (2005). Electronic properties of non-stoichiometric dislocation cores in GaN. Talk presented at Materials Research Society fall meeting. Boston, MA, USA. 2005-11-28 - 2005-12-01.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5D19-B Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5D1B-7

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Urheber:
Lymperakis, L.¹, Autor
Neugebauer, J.², Autor

Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337