Ab initio based multiscale modeling of dislocations in GaN

Neugebauer, J.

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Ab initio based multiscale modeling of dislocations in GaN

Neugebauer, J. (2005). Ab initio based multiscale modeling of dislocations in GaN. Talk presented at E-MRS-Fall Meeting. Warsaw, Poland. 2005-09-05 - 2005-09-07.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5E77-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-5E79-D

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Creators:
Neugebauer, J.¹, Author

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1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Identifiers: eDoc: 289331

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Title: E-MRS-Fall Meeting

Place of Event: Warsaw, Poland

Start-/End Date: 2005-09-05 - 2005-09-07

Invited: Yes

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