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  The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN

Lymperakis, L., & Neugebauer, J. (2005). The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN. Talk presented at The 6th International Conference on Nitride Semiconductors. Bremen. 2005-08-28 - 2005-09-02.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5EC5-0 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-5EC7-C
Genre: Talk

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 Creators:
Lymperakis, L.1, Author              
Neugebauer, J.2, Author              
Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
2Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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 Publication Status: Not specified
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 Identifiers: eDoc: 289324
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Title: The 6th International Conference on Nitride Semiconductors
Place of Event: Bremen
Start-/End Date: 2005-08-28 - 2005-09-02

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