The effect of charge on Basal dislocations in silicon carbide

Blumenau, A. T.; Eberlein, T. A. G.; Jones, R.; Öberg, S.; Frauenheim, T.; Briddon, P. R.

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The effect of charge on Basal dislocations in silicon carbide

Blumenau, A. T., Eberlein, T. A. G., Jones, R., Öberg, S., Frauenheim, T., & Briddon, P. R. (2004). The effect of charge on Basal dislocations in silicon carbide. Talk presented at EDS 2004. Chernogolovka, Russia. 2004-09-11 - 2004-09-17.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-644B-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-644D-6

Genre: Talk

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Creators:
Blumenau, A. T.¹, Author
Eberlein, T. A. G., Author
Jones, R., Author
Öberg, S., Author
Frauenheim, T., Author
Briddon, P. R., Author

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1Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863351

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Identifiers: eDoc: 286289

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Title: EDS 2004

Place of Event: Chernogolovka, Russia

Start-/End Date: 2004-09-11 - 2004-09-17

Invited: Yes

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