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  Substitution Solid Solutions FeGa3-xEx and Their Thermoelectric Properties

Wagner, M., Cardoso-Gil, R., & Grin, Y. (2014). Substitution Solid Solutions FeGa3-xEx and Their Thermoelectric Properties. Journal of Electronic Materials, 43(6), 1857-1864. doi:10.1007/s11664-013-2888-1.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-1230-9 Version Permalink: http://hdl.handle.net/21.11116/0000-0000-F97C-D
Genre: Journal Article

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 Creators:
Wagner, M.1, Author              
Cardoso-Gil, R.2, Author              
Grin, Yu.3, Author              
Affiliations:
1Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863405              
2Raul Cardoso, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863420              
3Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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Free keywords: FeGa3, substitution, solid solution, electron and phonon engineering, thermoelectric properties
 Abstract: In this study we performed substitution experiments on the gallium site of the intermetallic semiconductor FeGa3, to adjust the charge carrier concentration, and determined the thermoelectric (TE) properties of the resulting products. Isoelectronic species aluminium and indium, hole-doping zinc, and electron-doping germanium were chosen to find suitable substituent elements. The samples FeGa3−x E x (E = Al, In, Zn, Ge; x = 0.03, 0.05, 0.06, 0.10, 0.20) were prepared by liquid–solid–reaction with subsequent spark plasma sintering treatment. X-ray diffraction, metallographic, and microstructure analysis were used to determine chemical composition and to evaluate the suitability of the substitution element. For solid solutions FeGa3−x Al x and FeGa3−x In x the substitution concentrations were very low (x ≤ 0.02) and did not improve the TE properties of FeGa3. The samples FeGa3−x Zn x had the expected p-type behaviour and slightly lower thermal conductivity than the binary compound. A substantial increase in the TE figure of merit was achieved for the solid solution FeGa3−x Ge x for which transition from semiconducting to metal-like behaviour was observed, with an additional decrease of thermal conductivity. The maximum ZT value of 0.21 was achieved for the composition FeGa2.80Ge0.20.

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 Dates: 2014
 Publication Status: Published in print
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Title: Journal of Electronic Materials
  Other : J. Electron. Mater.
Source Genre: Journal
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Publ. Info: Warrendale, PA, etc. : Minerals, Metals & Materials Society and IEEE [etc.]
Pages: - Volume / Issue: 43 (6) Sequence Number: - Start / End Page: 1857 - 1864 Identifier: ISSN: 0361-5235
CoNE: /journals/resource/954925521690