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  Interface structure of epitaxial (111) VN films on (111) MgO substrates

Lazar, P., Rashkova, B., Redinger, J., Podloucky, R., Mitterer, C., Scheu, C., et al. (2008). Interface structure of epitaxial (111) VN films on (111) MgO substrates. Thin Solid Films, 517(3), 1177-1181. doi:10.1016/j.tsf.2008.06.006.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0024-54A9-C Version Permalink: http://hdl.handle.net/21.11116/0000-0001-6D43-A
Genre: Journal Article

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 Creators:
Lazar, Petr1, Author              
Rashkova, Boryana2, 3, Author              
Redinger, Josef1, Author              
Podloucky, Raimund4, Author              
Mitterer, Christian5, Author              
Scheu, Christina6, Author              
Dehm, Gerhard2, 3, Author              
Affiliations:
1Institute of Applied Physics, Vienna University of Technology, Vienna, Austria, ou_persistent22              
2Erich-Schmid-Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, 8700 Leoben, Austria, ou_persistent22              
3Department of Materials Physics, Montanuniversität Leoben, Austria, ou_persistent22              
4Department of Physical Chemistry, Vienna University, Vienna, Austria, ou_persistent22              
5Department of Physical Metallurgy and Materials Testing, Christian-Doppler Laboratory for Advanced Coatings, University of Leoben, Austria, ou_persistent22              
6Department Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Str. 18, 8700 Leoben, Austria, ou_persistent22              

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 Abstract: Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2–3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface.

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Language(s): eng - English
 Dates: 2008-06-092008-12-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1016/j.tsf.2008.06.006
 Degree: -

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Title: Thin Solid Films
  Abbreviation : Thin Solid Films
Source Genre: Journal
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Publ. Info: Lausanne, Switzerland, etc. : Elsevier
Pages: - Volume / Issue: 517 (3) Sequence Number: - Start / End Page: 1177 - 1181 Identifier: ISSN: 0040-6090
CoNE: /journals/resource/954925449792