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Abstract:
We have reinvestigated the Hall effect and the magnetoresistance of
UNiSn in a high-quality sample. Analysis of the results indicate the
presence of at least three different types of carriers in the
semiconducting state and a complex behavior at the transition from
paramagnetic semiconductor to antiferromagnetic metal. Contrary to the
expected result we observed only small changes in the carrier
concentration but a large increase in the mobility.
