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  Crystal Growth and Crystal Structure of EuPtIn4

Kushwaha, P., Thamizhavel, A., Nigam, A. K., & Ramakrishnan, S. (2014). Crystal Growth and Crystal Structure of EuPtIn4. Crystal Growth & Design, 14(6), 2747-2752. doi:10.1021/cg401864p.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-DB27-4 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0019-DB28-2
Genre: Journal Article

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 Creators:
Kushwaha, Pallavi1, Author              
Thamizhavel, Arumugam2, Author
Nigam, Arun Kumar2, Author
Ramakrishnan, Srinivasan2, Author
Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404              
2external, ou_persistent22              

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 Abstract: A single crystal of the indium-rich intermetallic compound EuPtIn4 has been grown by a high-temperature solution growth method, with molten indium as solvent. The crystal structure of the compound was solved from the single crystal X-ray diffraction data and it is found that EuPtIn4 crystallizes in the orthorhombic crystal structure with the space group Cmcm. The estimated lattice constants are a = 4.5300(7) angstrom, b = 16.904(3) angstrom, and c = 7.3601(12) angstrom with the unit cell volume V = 563.60(15) angstrom(3). There are four formula units per unit cell (Z = 4), and the R-parameters are R = 0.0390 and wR(2) = 0.1033 for 496 unique reflections. A comparison of lattice constants with those of isostructural SrPtIn4, LaPtIn4, EuPtIn4, and eYbPtIn(4) indicates that the radius of the rare-earth ion decides the indium octahedra distortion in the bc-plane. This leads to nonmonotonic variation in b and c parameters from the early to the late rare earth element based compounds. EuPtIn4 is a highly conducting material, with a room temperature resistivity of 25 mu Omega.cm. Low-temperature resistivity, magnetization, and heat capacity measurements show two antiferromagnetic transitions near 13 and 5.5 K. From the heat capacity data it was observed that EuPtIn4 has a large Sommerfeld coefficient (gamma), which was estimated to be 725 mJ/K-2.mol.

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 Dates: 2014-04-05
 Publication Status: Published in print
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 Identifiers: ISI: 000337018900010
DOI: 10.1021/cg401864p
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Title: Crystal Growth & Design
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 14 (6) Sequence Number: - Start / End Page: 2747 - 2752 Identifier: ISSN: 1528-7483
CoNE: /journals/resource/110978984570353