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  Opening a band gap without breaking lattice symmetry: a new route toward robust graphene-based nanoelectronics

Kou, L., Hu, F., Yan, B., Frauenheim, T., & Chen, C. (2014). Opening a band gap without breaking lattice symmetry: a new route toward robust graphene-based nanoelectronics. Nanoscale, 6(13), 7474-7479. doi:10.1039/c4nr01102c.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-001A-078F-C Version Permalink: http://hdl.handle.net/11858/00-001M-0000-001A-0791-4
Genre: Journal Article

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 Creators:
Kou, Liangzhi1, Author
Hu, Feiming1, Author
Yan, Binghai2, Author              
Frauenheim, Thomas1, Author
Chen, Changfeng1, Author
Affiliations:
1external, ou_persistent22              
2Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

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 Abstract: Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that a proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by an interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

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 Dates: 2014-07-01
 Publication Status: Published in print
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 Rev. Method: -
 Identifiers: ISI: 000337786700047
DOI: 10.1039/c4nr01102c
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Title: Nanoscale
Source Genre: Journal
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Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 6 (13) Sequence Number: - Start / End Page: 7474 - 7479 Identifier: ISSN: 2040-3364
CoNE: /journals/resource/2040-3364