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  Tensile strained InxGa1-xP membranes for cavity optomechanics

Cole, G. D., Yu, P.-.-L., Gärtner, C., Siquans, K., Nia, R. M., Schmöle, J., et al. (2014). Tensile strained InxGa1-xP membranes for cavity optomechanics. Applied Physics Letters, 104(20): 201908. doi:10.1063/1.4879755.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-001A-0E7D-F Version Permalink: http://hdl.handle.net/11858/00-001M-0000-001A-0E83-0
Genre: Journal Article

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 Creators:
Cole, G. D., Author
Yu, P. -L., Author
Gärtner, C., Author
Siquans, K., Author
Nia, R. Moghadas1, Author
Schmöle, J., Author
Hoelscher-Obermaier, J.1, Author
Purdy, T. P., Author
Wieczorek, W., Author
Regal, C. A., Author
Aspelmeyer, M., Author
Affiliations:
1AEI-Hannover, MPI for Gravitational Physics, Max Planck Society, Hannover, DE, ou_24009              

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Free keywords: Condensed Matter, Mesoscale and Nanoscale Physics, cond-mat.mes-hall, Physics, Optics, physics.optics,Quantum Physics, quant-ph
 Abstract: We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique properties of thin-film semiconductor single crystals, as previously demonstrated with suspended GaAs. Here we employ lattice mismatch in epitaxial growth to impart an intrinsic tensile strain to a monocrystalline thin film (approximately 30 nm thick). These structures exhibit mechanical quality factors of 2*10^6 or beyond at room temperature and 17 K for eigenfrequencies up to 1 MHz, yielding Q*f products of 2*10^12 Hz for a tensile stress of ~170 MPa. Incorporating such membranes in a high finesse Fabry-Perot cavity, we extract an upper limit to the total optical loss (including both absorption and scatter) of 40 ppm at 1064 nm and room temperature. Further reductions of the In content of this alloy will enable tensile stress levels of 1 GPa, with the potential for a significant increase in the Q*f product, assuming no deterioration in the mechanical loss at this composition and strain level. This materials system is a promising candidate for the integration of strained semiconductor membrane structures with low-loss semiconductor mirrors and for realizing stacks of membranes for enhanced optomechanical coupling.

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 Dates: 2014-03-312014
 Publication Status: Published in print
 Pages: 10 pages, 3 figures
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: arXiv: 1404.0029
DOI: 10.1063/1.4879755
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 104 (20) Sequence Number: 201908 Start / End Page: - Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223