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  Enhanced thermoelectric performance in the p-type half-Heusler (Ti/Zr/Hf)CoSb0.8Sn0.2 system via phase separation

Rausch, E., Balke, B., Ouardi, S., & Felser, C. (2014). Enhanced thermoelectric performance in the p-type half-Heusler (Ti/Zr/Hf)CoSb0.8Sn0.2 system via phase separation. Physical Chemistry Chemical Physics, 16(46), 25258-25262. doi:10.1039/C4CP02561J.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0023-CA7A-F Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-1CAF-B
Genre: Journal Article

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 Creators:
Rausch, Elisabeth1, Author              
Balke, Benjamin2, Author
Ouardi, Siham3, Author              
Felser, Claudia4, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439              
4Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: A novel approach for optimization of the thermoelectric properties of p-type Heusler compounds with a C1b structure was investigated. A successful recipe for achieving intrinsic phase separation in the n-type material based on the TiNiSn system is isoelectronic partial substitution of Ti with its heavier homologues Zr and Hf. We applied this concept to the p-type system MCoSb0.8Sn0.2 by a systematic investigation of samples with different compositions at the Ti position (M = Ti, Zr, Hf, Ti0.5Zr0.5, Zr0.5Hf0.5, and Ti0.5Hf0.5). We thus achieved an approximately 40% reduction of the thermal conductivity and a maximum figure of merit ZT of 0.9 at 700 °C. This is a 80% improvement in peak ZT from 0.5 to 0.9 at 700 °C compared to the best published value of an ingot p-type half-Heusler compound. Thus far, comparable good thermoelectric p-type materials of this structure type have only been realized by a nanostructuring process via ball milling of premelted ingot samples followed by a rapid consolidation method, like hot pressing. The herein-presented simple arc-melting fabrication method reduces the fabrication time as compared to this multi-step nanostructuring process. The high mechanical stability of the Heusler compounds is favorable for the construction of thermoelectric modules. The Vickers hardness values are close to those of the n-type material, leading to good co-processability of both materials.

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 Dates: 2014-08-132014-11-01
 Publication Status: Published in print
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 Rev. Method: -
 Identifiers: DOI: 10.1039/C4CP02561J
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Title: Physical Chemistry Chemical Physics
  Abbreviation : Phys. Chem. Chem. Phys.
Source Genre: Journal
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Publ. Info: Cambridge, England : Royal Society of Chemistry
Pages: - Volume / Issue: 16 (46) Sequence Number: - Start / End Page: 25258 - 25262 Identifier: ISSN: 1463-9076
CoNE: https://pure.mpg.de/cone/journals/resource/954925272413_1