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Schlagwörter:
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Zusammenfassung:
Inspired by the promising thermoelectric properties of phase-separated
half-Heusler materials, we investigated the influence of electron doping
in the n-type Ti0.3-xZr0.35Hf0 35NiSn compound. The addition of Nb to
this compound led to a significant increase in its electrical
conductivity, and shifted the maximum Seebeck coefficient to higher
temperatures owing to the suppression of intrinsic carriers. This
resulted in an enhancement of both the power factor alpha(2)sigma and
figure of merit, zT. The applicability of an average effective mass
model revealed the optimized electron properties for samples containing
Nb. There is evidence in the literature that the average effective mass
model is suitable for estimating the optimized carrier concentration of
thermoelectric n-type half-Heusler compounds.
