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  Investigation of the Mn3-δ Ga/MgO interface for magnetic tunneling junctions

ViolBarbosa, C. E., Ouardi, S., Kubota, T., Mizukami, S., Fecher, G. H., Miyazaki, T., et al. (2014). Investigation of the Mn3-δ Ga/MgO interface for magnetic tunneling junctions. Journal of Applied Physics, 116(3): 034508, pp. 1-4. doi:10.1063/1.4890582.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0023-CE7A-D Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-F7FA-4
Genre: Journal Article

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 Creators:
ViolBarbosa, C. E.1, Author              
Ouardi, S.2, Author              
Kubota, T.3, Author
Mizukami, S.3, Author
Fecher, G. H.4, Author              
Miyazaki, T.3, Author
Kozina, X.3, Author
Ikenaga, E.3, Author
Felser, C.5, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439              
3external, ou_persistent22              
4Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
5Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: The Mn3Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque magnetoresistive memories. Mn-Ga films exhibits perpendicular magnetic anisotropy and high spin polarization and can be used to improve the performance of MgO-based magneto tunneling junctions. The interface between Mn-Ga and MgO films were chemically characterized by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. We show that the deposition of few monoatomic layers of Mg on top of Mn-Ga film, before the MgO deposition, strongly suppresses the oxidation of gallium. (C) 2014 AIP Publishing LLC.

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 Dates: 2014-07-21
 Publication Status: Published in print
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 Rev. Method: -
 Identifiers: ISI: 000340710500086
DOI: 10.1063/1.4890582
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Title: Journal of Applied Physics
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 116 (3) Sequence Number: 034508 Start / End Page: 1 - 4 Identifier: ISSN: 0021-8979
CoNE: /journals/resource/991042723401880